Higher Conductivity and Enhanced Optoelectronic Properties of Chemically Grown Nd-Doped CaSnO(3) Perovskite Oxide Thin Films

[Image: see text] Stannous-based perovskite oxide materials are regarded as an important class of transparent conductive oxides for various fields of application. Enhancing the properties of such materials and facilitating the synthesis process are considered major challenging aspects for proper device applications. In the present paper, a comprehensive and detailed study of the properties of spray-coated CaSnO(3) thin films onto the Si(100) substrate is reported. In addition, the substrate effect and the incorporation of rare-earth Nd(3+) on engineering the characteristics of CaSnO(3) thin films annealed at 800 °C are included. X-ray diffraction (XRD) analysis results revealed the orthorhombic structure of all the samples with an expansion of lattice spacing as the substitution of Nd at the Ca site increased. The Raman and FT-IR analysis further confirmed the structural results collected via the XRD analysis. Surface scanning using field-emission scanning electron microscopy revealed the formation of quasi-orthorhombic CaSnO(3) grains with an increase in size as dopant content increased. Energy-dispersive X-ray analysis allowed quantification of the elements, while atomic mapping permitted visualizing their distribution along the surfaces. UV–visible spectroscopy and first-principles calculations using density functional theory (DFT) were conducted, and a thorough investigation of the optical and electronic properties of the pure material upon Nd(3+) insertion was provided. Electrical properties collected at room temperature revealed a growing conductivity upon doping ratio increase with a simultaneous enhancement in the carrier concentrations and mobility. The findings of the present work will help facilitate the synthesis procedure of large-area stannous-based perovskite oxide thin films through simple and efficient chemical solution methods for optoelectronic device applications.