Study on Improving the Precise Machinability of Single Crystal SiC by an Ultrasonic-Assisted Hybrid Process

Silicon carbide (SiC) devices have become one of the key research directions in the field of power electronics. However, due to the limitation of the SiC wafer growth process and processing capacity, SiC devices, such as SiC MOSFET (Metal-oxide-semiconductor Field-effect Transistor), are facing the...

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Detalles Bibliográficos
Autores principales: Shi, Dong, Zhao, Tianchen, Ma, Tengfei, Pan, Jinping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8658092/
https://www.ncbi.nlm.nih.gov/pubmed/34885475
http://dx.doi.org/10.3390/ma14237320

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8658092/
https://www.ncbi.nlm.nih.gov/pubmed/34885475
http://dx.doi.org/10.3390/ma14237320

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