High Performance Predictable Quantum Efficient Detector Based on Induced-Junction Photodiodes Passivated with SiO(2)/SiN(x)

We performed a systematic study involving simulation and experimental techniques to develop induced-junction silicon photodetectors passivated with thermally grown SiO(2) and plasma-enhanced chemical vapor deposited (PECVD) SiN(x) thin films that show a record high quantum efficiency. We investigate...

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Detalles Bibliográficos
Autores principales: Koybasi, Ozhan, Nordseth, Ørnulf, Tran, Trinh, Povoli, Marco, Rajteri, Mauro, Pepe, Carlo, Bardalen, Eivind, Manoocheri, Farshid, Summanwar, Anand, Korpusenko, Mikhail, Getz, Michael N., Ohlckers, Per, Ikonen, Erkki, Gran, Jarle
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8659469/
https://www.ncbi.nlm.nih.gov/pubmed/34883811
http://dx.doi.org/10.3390/s21237807

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8659469/
https://www.ncbi.nlm.nih.gov/pubmed/34883811
http://dx.doi.org/10.3390/s21237807

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