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The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects

We have designed high-efficient spin-filtering junctions composed of graphene and silicon carbide nanoribbons. We have calculated the spin and charge transport in the junction by non-equilibrium Green’s function formalism combined with the density functional theory to find its spin-dependent electri...

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Autores principales: Khanlar, Golnaz, Vishkayi, Sahar Izadi, Soleimani, Hamid Rahimpour
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8668924/
https://www.ncbi.nlm.nih.gov/pubmed/34903793
http://dx.doi.org/10.1038/s41598-021-03363-z
_version_ 1784614682723614720
author Khanlar, Golnaz
Vishkayi, Sahar Izadi
Soleimani, Hamid Rahimpour
author_facet Khanlar, Golnaz
Vishkayi, Sahar Izadi
Soleimani, Hamid Rahimpour
author_sort Khanlar, Golnaz
collection PubMed
description We have designed high-efficient spin-filtering junctions composed of graphene and silicon carbide nanoribbons. We have calculated the spin and charge transport in the junction by non-equilibrium Green’s function formalism combined with the density functional theory to find its spin-dependent electrical conductance, thermal conductance and Seebeck coefficient. In addition, the effect of Si and C atoms vacancies on the transport properties of the junction has been carefully investigated. The enhanced spin-filtering is clearly observed due to the edge and vacancy effects. On the other hand, vacancy defects increase the electrical and spin conductances of the junctions. The results show that the considered junctions are half-metal with reduced thermal conductance which makes them a suitable spin-dependent thermoelectric device. Our results predict the promising potential of the considered junctions for application in spintronic devices.
format Online
Article
Text
id pubmed-8668924
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher Nature Publishing Group UK
record_format MEDLINE/PubMed
spelling pubmed-86689242021-12-15 The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects Khanlar, Golnaz Vishkayi, Sahar Izadi Soleimani, Hamid Rahimpour Sci Rep Article We have designed high-efficient spin-filtering junctions composed of graphene and silicon carbide nanoribbons. We have calculated the spin and charge transport in the junction by non-equilibrium Green’s function formalism combined with the density functional theory to find its spin-dependent electrical conductance, thermal conductance and Seebeck coefficient. In addition, the effect of Si and C atoms vacancies on the transport properties of the junction has been carefully investigated. The enhanced spin-filtering is clearly observed due to the edge and vacancy effects. On the other hand, vacancy defects increase the electrical and spin conductances of the junctions. The results show that the considered junctions are half-metal with reduced thermal conductance which makes them a suitable spin-dependent thermoelectric device. Our results predict the promising potential of the considered junctions for application in spintronic devices. Nature Publishing Group UK 2021-12-13 /pmc/articles/PMC8668924/ /pubmed/34903793 http://dx.doi.org/10.1038/s41598-021-03363-z Text en © The Author(s) 2021 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Khanlar, Golnaz
Vishkayi, Sahar Izadi
Soleimani, Hamid Rahimpour
The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
title The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
title_full The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
title_fullStr The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
title_full_unstemmed The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
title_short The spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
title_sort spin-dependent properties of silicon carbide/graphene nanoribbons junctions with vacancy defects
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8668924/
https://www.ncbi.nlm.nih.gov/pubmed/34903793
http://dx.doi.org/10.1038/s41598-021-03363-z
work_keys_str_mv AT khanlargolnaz thespindependentpropertiesofsiliconcarbidegraphenenanoribbonsjunctionswithvacancydefects
AT vishkayisaharizadi thespindependentpropertiesofsiliconcarbidegraphenenanoribbonsjunctionswithvacancydefects
AT soleimanihamidrahimpour thespindependentpropertiesofsiliconcarbidegraphenenanoribbonsjunctionswithvacancydefects
AT khanlargolnaz spindependentpropertiesofsiliconcarbidegraphenenanoribbonsjunctionswithvacancydefects
AT vishkayisaharizadi spindependentpropertiesofsiliconcarbidegraphenenanoribbonsjunctionswithvacancydefects
AT soleimanihamidrahimpour spindependentpropertiesofsiliconcarbidegraphenenanoribbonsjunctionswithvacancydefects