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Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2)

Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reporte...

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Detalles Bibliográficos
Autores principales: Du, Wanying, Jia, Xionghui, Cheng, Zhixuan, Xu, Wanjing, Li, Yanping, Dai, Lun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Elsevier 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8668989/
https://www.ncbi.nlm.nih.gov/pubmed/34917894
http://dx.doi.org/10.1016/j.isci.2021.103491
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author Du, Wanying
Jia, Xionghui
Cheng, Zhixuan
Xu, Wanjing
Li, Yanping
Dai, Lun
author_facet Du, Wanying
Jia, Xionghui
Cheng, Zhixuan
Xu, Wanjing
Li, Yanping
Dai, Lun
author_sort Du, Wanying
collection PubMed
description Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe(2) and n-MoS(2), which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al(2)O(3). Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits.
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spelling pubmed-86689892021-12-15 Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2) Du, Wanying Jia, Xionghui Cheng, Zhixuan Xu, Wanjing Li, Yanping Dai, Lun iScience Article Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low power consumption. So far, the performance of the reported TMDCs-based CMOS inverters is not satisfactory. Besides, most of the inverters were made of mechanically exfoliated materials, which hinders their reproducible production and large-scale integration in practical application. In this study, we demonstrate a practical approach to fabricate CMOS inverter arrays using large-area p-MoTe(2) and n-MoS(2), which are grown via chemical vapor deposition method. The current characteristics of the channel materials are balanced by atomic layer depositing Al(2)O(3). Complete logic swing and clear dynamic switching behavior are observed in the inverters. Especially, ultra-low power consumption of ∼0.37 nW is achieved. Our work paves the way for the application of 2D TMDCs materials in large-scale low-power-consumption logic circuits. Elsevier 2021-11-22 /pmc/articles/PMC8668989/ /pubmed/34917894 http://dx.doi.org/10.1016/j.isci.2021.103491 Text en © 2021 The Author(s) https://creativecommons.org/licenses/by/4.0/This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Du, Wanying
Jia, Xionghui
Cheng, Zhixuan
Xu, Wanjing
Li, Yanping
Dai, Lun
Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2)
title Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2)
title_full Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2)
title_fullStr Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2)
title_full_unstemmed Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2)
title_short Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe(2) and n-MoS(2)
title_sort low-power-consumption cmos inverter array based on cvd-grown p-mote(2) and n-mos(2)
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8668989/
https://www.ncbi.nlm.nih.gov/pubmed/34917894
http://dx.doi.org/10.1016/j.isci.2021.103491
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