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Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors

[Image: see text] Free-standing and flexible field-effect transistors based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene)/polystyrene bilayers are obtained by well-controlled phase separation of both components. The phase separation is induced by solvent vapor annealing of initial...

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Autores principales: Zajaczkowska, Hanna, Veith, Lothar, Waliszewski, Witold, Bartkiewicz, Malgorzata A., Borkowski, Michal, Sleczkowski, Piotr, Ulanski, Jacek, Graczykowski, Bartlomiej, Blom, Paul W. M., Pisula, Wojciech, Marszalek, Tomasz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8678985/
https://www.ncbi.nlm.nih.gov/pubmed/34866376
http://dx.doi.org/10.1021/acsami.1c15208
_version_ 1784616421000478720
author Zajaczkowska, Hanna
Veith, Lothar
Waliszewski, Witold
Bartkiewicz, Malgorzata A.
Borkowski, Michal
Sleczkowski, Piotr
Ulanski, Jacek
Graczykowski, Bartlomiej
Blom, Paul W. M.
Pisula, Wojciech
Marszalek, Tomasz
author_facet Zajaczkowska, Hanna
Veith, Lothar
Waliszewski, Witold
Bartkiewicz, Malgorzata A.
Borkowski, Michal
Sleczkowski, Piotr
Ulanski, Jacek
Graczykowski, Bartlomiej
Blom, Paul W. M.
Pisula, Wojciech
Marszalek, Tomasz
author_sort Zajaczkowska, Hanna
collection PubMed
description [Image: see text] Free-standing and flexible field-effect transistors based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene)/polystyrene bilayers are obtained by well-controlled phase separation of both components. The phase separation is induced by solvent vapor annealing of initially amorphous blend films, leading to crystallization of TIPS-pentacene as the top layer. The crystallinity and blend morphology strongly depend on the molecular weight of polystyrene, and under optimized conditions, distinct phase separation with a well-defined and trap-free interface between both fractions is achieved. Due to the distinct bilayer morphology, the resulting flexible field-effect transistors reveal similar charge carrier mobilities as rigid devices and additionally pronounced environmental and bias stress stabilities. The performance of the flexible transistors remains stable up to a strain of 1.8%, while above this deformation, a close relation between current and strain is observed that is required for applications in strain sensors.
format Online
Article
Text
id pubmed-8678985
institution National Center for Biotechnology Information
language English
publishDate 2021
publisher American Chemical Society
record_format MEDLINE/PubMed
spelling pubmed-86789852021-12-20 Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors Zajaczkowska, Hanna Veith, Lothar Waliszewski, Witold Bartkiewicz, Malgorzata A. Borkowski, Michal Sleczkowski, Piotr Ulanski, Jacek Graczykowski, Bartlomiej Blom, Paul W. M. Pisula, Wojciech Marszalek, Tomasz ACS Appl Mater Interfaces [Image: see text] Free-standing and flexible field-effect transistors based on 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene)/polystyrene bilayers are obtained by well-controlled phase separation of both components. The phase separation is induced by solvent vapor annealing of initially amorphous blend films, leading to crystallization of TIPS-pentacene as the top layer. The crystallinity and blend morphology strongly depend on the molecular weight of polystyrene, and under optimized conditions, distinct phase separation with a well-defined and trap-free interface between both fractions is achieved. Due to the distinct bilayer morphology, the resulting flexible field-effect transistors reveal similar charge carrier mobilities as rigid devices and additionally pronounced environmental and bias stress stabilities. The performance of the flexible transistors remains stable up to a strain of 1.8%, while above this deformation, a close relation between current and strain is observed that is required for applications in strain sensors. American Chemical Society 2021-12-04 2021-12-15 /pmc/articles/PMC8678985/ /pubmed/34866376 http://dx.doi.org/10.1021/acsami.1c15208 Text en © 2021 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Zajaczkowska, Hanna
Veith, Lothar
Waliszewski, Witold
Bartkiewicz, Malgorzata A.
Borkowski, Michal
Sleczkowski, Piotr
Ulanski, Jacek
Graczykowski, Bartlomiej
Blom, Paul W. M.
Pisula, Wojciech
Marszalek, Tomasz
Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors
title Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors
title_full Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors
title_fullStr Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors
title_full_unstemmed Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors
title_short Self-Aligned Bilayers for Flexible Free-Standing Organic Field-Effect Transistors
title_sort self-aligned bilayers for flexible free-standing organic field-effect transistors
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8678985/
https://www.ncbi.nlm.nih.gov/pubmed/34866376
http://dx.doi.org/10.1021/acsami.1c15208
work_keys_str_mv AT zajaczkowskahanna selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT veithlothar selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT waliszewskiwitold selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT bartkiewiczmalgorzataa selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT borkowskimichal selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT sleczkowskipiotr selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT ulanskijacek selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT graczykowskibartlomiej selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT blompaulwm selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT pisulawojciech selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors
AT marszalektomasz selfalignedbilayersforflexiblefreestandingorganicfieldeffecttransistors