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In situ growth of large-area and self-aligned graphene nanoribbon arrays on liquid metal

Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices, whereas graphene nanoribbons (GNRs) are promising semiconductors because of their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a majo...

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Detalles Bibliográficos
Autores principales: Cai, Le, He, Wanzhen, Xue, Xudong, Huang, Jianyao, Zhou, Ke, Zhou, Xiahong, Xu, Zhiping, Yu, Gui
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Oxford University Press 2020
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8692927/
https://www.ncbi.nlm.nih.gov/pubmed/34987835
http://dx.doi.org/10.1093/nsr/nwaa298
Descripción
Sumario:Intrinsic graphene features semi-metallic characteristics that limit its applications in electronic devices, whereas graphene nanoribbons (GNRs) are promising semiconductors because of their bandgap-opening feature. However, the controllable mass-fabrication of high-quality GNR arrays remains a major challenge. In particular, the in situ growth of GNR arrays through template-free chemical vapor deposition (CVD) has not been realized. Herein, we report a template-free CVD strategy to grow large-area, high-quality and self-aligned GNR arrays on liquid copper surface. The width of as-grown GNR could be optimized to sub-10 nm with aspect ratio up to 387, which is higher than those of reported CVD-GNRs. The study of the growth mechanism indicates that a unique comb-like etching-regulated growth process caused by a trace hydrogen flow guides the formation of the mass-produced self-aligned GNR arrays. Our approach is operationally simple and efficient, offering an assurance for the use of GNR arrays in integrated circuits.