Growth mode and strain effect on relaxor ferroelectric domains in epitaxial 0.67Pb(Mg(1/3)Nb(2/3))O(3)–0.33PbTiO(3)/SrRuO(3) heterostructures

Controlling the growth of complex relaxor ferroelectric thin films and understanding the relationship between biaxial strain–structural domain characteristics are desirable for designing materials with a high electromechanical response. For this purpose, epitaxial thin films free of extended defects...

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Detalles Bibliográficos
Autores principales: Belhadi, Jamal, Gabor, Urška, Uršič, Hana, Daneu, Nina, Kim, Jieun, Tian, Zishen, Koster, Gertjan, Martin, Lane W., Spreitzer, Matjaž
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693390/
https://www.ncbi.nlm.nih.gov/pubmed/35424096
http://dx.doi.org/10.1039/d0ra10107a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8693390/
https://www.ncbi.nlm.nih.gov/pubmed/35424096
http://dx.doi.org/10.1039/d0ra10107a

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