Cargando…
A mechanism for the variation in the photoelectric performance of a photodetector based on CVD-grown 2D MoS(2)
Two-dimensional transition-metal dichalcogenides are considered as promising candidates for next-generation flexible nanoelectronics owing to their compelling properties. The photoelectric performance of a photodetector based on CVD-grown 2D MoS(2) was studied. It is found that annealing treatment c...
Autores principales: | Jian, Jiaying, Chang, Honglong, Dong, Pengfan, Bai, Zewen, Zuo, Kangnian |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8694605/ https://www.ncbi.nlm.nih.gov/pubmed/35424465 http://dx.doi.org/10.1039/d0ra10302k |
Ejemplares similares
-
Structure and Properties of Single-Layer MoS(2) for Nano-Photoelectric Devices
por: Jian, Jiaying, et al.
Publicado: (2019) -
CVD-grown monolayer MoS(2) in bioabsorbable electronics and biosensors
por: Chen, Xiang, et al.
Publicado: (2018) -
Edge contacts accelerate the response of MoS(2) photodetectors
por: Strauß, Fabian, et al.
Publicado: (2023) -
MoS(2) and CdMoS(4) nanostructure-based UV light photodetectors
por: Pawar, Mahendra S., et al.
Publicado: (2021) -
Sulfurization engineering of single-zone CVD vertical and horizontal MoS(2) on p-GaN heterostructures for self-powered UV photodetectors
por: Zulkifli, Nur 'Adnin Akmar, et al.
Publicado: (2023)