Gate-bias instability of few-layer WSe(2) field effect transistors

Semiconducting two-dimensional (2D) layered materials have shown great potential in next-generation electronics due to their novel electronic properties. However, the performance of field effect transistors (FETs) based on 2D materials is always environment-dependent and unstable under gate bias str...

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Detalles Bibliográficos
Autores principales: Wen, Shaofeng, Lan, Changyong, Li, Chun, Zhou, Sihan, He, Tianying, Zhang, Rui, Zou, Ruisen, Hu, Hao, Yin, Yi, Liu, Yong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8694931/
https://www.ncbi.nlm.nih.gov/pubmed/35423215
http://dx.doi.org/10.1039/d0ra09376a

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8694931/
https://www.ncbi.nlm.nih.gov/pubmed/35423215
http://dx.doi.org/10.1039/d0ra09376a

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