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Gate-bias instability of few-layer WSe(2) field effect transistors
Semiconducting two-dimensional (2D) layered materials have shown great potential in next-generation electronics due to their novel electronic properties. However, the performance of field effect transistors (FETs) based on 2D materials is always environment-dependent and unstable under gate bias str...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8694931/ https://www.ncbi.nlm.nih.gov/pubmed/35423215 http://dx.doi.org/10.1039/d0ra09376a |