Influence of low Bi contents on phase transformation properties of VO(2) studied in a VO(2):Bi thin film library

A thin-film materials library in the system V–Bi–O was fabricated by reactive co-sputtering. The composition of Bi relative to V was determined by Rutherford backscattering spectroscopy, ranging from 0.06 to 0.84 at% along the library. The VO(2) phase M1 was detected by X-ray diffraction over the whole library, however a second phase was observed in the microstructure of films with Bi contents > 0.29 at%. The second phase was determined by electron diffraction to be BiVO(4), which suggests that the solubility limit of Bi in VO(2) is only ∼0.29 at%. For Bi contents from 0.08 to 0.29 at%, the phase transformation temperatures of VO(2):Bi increase from 74.7 to 76.4 °C by 8 K per at% Bi. With X-ray photoemission spectroscopy, the oxidation state of Bi was determined to be 3+. The V(5+)/V(4+) ratio increases with increasing Bi content from 0.10 to 0.84 at%. The similarly increasing tendency of the V(5+)/V(4+) ratio and T(c) with Bi content suggests that although the ionic radius of Bi(3+) is much larger than that of V(4+), the charge doping effect and the resulting V(5+) are more prominent in regulating the phase transformation behavior of Bi-doped VO(2).