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Temperature assistance of electric field-controlled spin–orbit torque-based magnetization switching in PMN–PT/FePt heterostructures

We report the temperature assistance of electric field (E-field)-controlled spin–orbit torque (SOT)-based magnetization switching of L1(0)-FePt films grown on a PbMg(1/3)Nb(2/3)O(3)–PbTiO(3) (PMN–PT) (011) substrate, which generates considerable strain via piezoelectric effects of the PMN–PT substra...

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Detalles Bibliográficos
Autores principales: Guo, Qi, Wang, Zhicheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697033/
https://www.ncbi.nlm.nih.gov/pubmed/35423760
http://dx.doi.org/10.1039/d1ra00919b
Descripción
Sumario:We report the temperature assistance of electric field (E-field)-controlled spin–orbit torque (SOT)-based magnetization switching of L1(0)-FePt films grown on a PbMg(1/3)Nb(2/3)O(3)–PbTiO(3) (PMN–PT) (011) substrate, which generates considerable strain via piezoelectric effects of the PMN–PT substrate under E-field. Owing to large strain-induced effective field and weak perpendicular magnetic anisotropy (PMA) at a high temperature, E-field controls the PMA- and SOT-based magnetization switching more effectively. Driven by E-field, magnetization switching is detected by a magnetic optical Kerr (MOKE) microscope under a fixed perpendicular magnetic field. Furthermore, E-field modulates change of anomalous Hall resistance regularly, which enables us to achieve the bidirectional transmission of data by designing an E-field controlled SOT-based logical circuit. This study indicates an efficient way to fabricate potential E-field-controlled spintronic applications at high temperatures.