Tailoring Wettability Properties of GaN Epitaxial Layers through Surface Porosity Induced during CVD Deposition

[Image: see text] Porous GaN epitaxial layers were prepared using single-step chemical vapor deposition (CVD) through the direct reaction of ammonia with gallium. The degree of porosity and pore diameters in the resulting GaN were analyzed by means of SEM and AFM and were found to depend on the GaN...

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Detalles Bibliográficos
Autores principales: Mena, Josué, Carvajal, Joan J., Zubialevich, Vitaly, Parbrook, Peter J., Díaz, Francesc, Aguiló, Magdalena
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2021
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697560/
https://www.ncbi.nlm.nih.gov/pubmed/34890194
http://dx.doi.org/10.1021/acs.langmuir.1c02316

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697560/
https://www.ncbi.nlm.nih.gov/pubmed/34890194
http://dx.doi.org/10.1021/acs.langmuir.1c02316

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