A Sandwich Metal–Insulation–Metal Composite for Magnetoelectric Memory: Experiment and Modeling

[Image: see text] Driven by the development of internet technology, higher requirements on information materials and data storage devices were demanded. To improve the work efficiency and performance of the new generation of information materials and data storage devices, the magnetoelectric (ME) coupling and storage mechanism of magnetoelectric composites deserve more attention. Here, we explored the influence of applied magnetic fields on the output voltage on a metal–insulation–metal (MIM) sandwich composite for realizing the magnetoelectric memory by experiments and modeling. It is found that the DC magnetic field (H(dc)) and the output voltage of the polyvinylidene fluoride film are linearly correlated. At a frequency of 1 kHz, the magnetoelectric voltage coefficient is 60.71 mV cm(–1) Oe(–1), which is evidently larger than that of other film materials. From this work, we can conclude that the MIM sandwich composite could generate higher magnetoelectric voltage under the AC magnetic field (H(ac)) with higher frequency, which could be used as the magnetoelectric memory device, and provides significant support for improving the performance of magnetoelectric memory devices and the whole internet system.