Cargando…
Enhanced negative magnetoresistance near the charge neutral point in Cr doped topological insulator
Negative magnetoresistance (MR) is not only of great fundamental interest for condensed matter physics and materials science, but also important for practical applications, especially magnetic data storage and sensors. However, the microscopic origin of negative MR is still elusive and the nature of...
Autores principales: | Guo, Qixun, Wu, Yu, Wang, Dongwei, Han, Gang, Wang, Xuemin, Fu, Libo, Wang, Lihua, He, Wei, Zhu, Tao, Zhu, Zhendong, Liu, Tao, Yu, Guanghua, Teng, Jiao |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
The Royal Society of Chemistry
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8697728/ https://www.ncbi.nlm.nih.gov/pubmed/35423914 http://dx.doi.org/10.1039/d1ra02079j |
Ejemplares similares
-
Gigantic negative magnetoresistance in the bulk of a disordered topological insulator
por: Breunig, Oliver, et al.
Publicado: (2017) -
Huge magnetoresistance in topological insulator spin-valves at room temperature
por: Tseng, Peng, et al.
Publicado: (2021) -
Unidirectional spin-Hall and Rashba−Edelstein magnetoresistance in topological insulator-ferromagnet layer heterostructures
por: Lv, Yang, et al.
Publicado: (2018) -
Carrier-mediated ferromagnetism in the magnetic topological insulator Cr-doped (Sb,Bi)(2)Te(3)
por: Ye, Mao, et al.
Publicado: (2015) -
Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction
por: Tian, Jifa, et al.
Publicado: (2014)