Application of Laser Treatment in MOS-TFT Active Layer Prepared by Solution Method

The active layer of metal oxide semiconductor thin film transistor (MOS-TFT) prepared by solution method, with the advantages of being a low cost and simple preparation process, usually needs heat treatment to improve its performance. Laser treatment has the advantages of high energy, fast speed, le...

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Detalles Bibliográficos
Autores principales: Chen, Nanhong, Ning, Honglong, Liang, Zhihao, Liu, Xianzhe, Wang, Xiaofeng, Yao, Rihui, Zhong, Jinyao, Fu, Xiao, Qiu, Tian, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8704860/
https://www.ncbi.nlm.nih.gov/pubmed/34945352
http://dx.doi.org/10.3390/mi12121496

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8704860/
https://www.ncbi.nlm.nih.gov/pubmed/34945352
http://dx.doi.org/10.3390/mi12121496

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