Cargando…
Semiconductor Nanowire Field-Effect Transistors as Sensitive Detectors in the Far-Infrared
Engineering detection dynamics in nanoscale receivers that operate in the far infrared (frequencies in the range 0.1–10 THz) is a challenging task that, however, can open intriguing perspectives for targeted applications in quantum science, biomedicine, space science, tomography, security, process a...
Autores principales: | Asgari, Mahdi, Viti, Leonardo, Zannier, Valentina, Sorba, Lucia, Vitiello, Miriam Serena |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705442/ https://www.ncbi.nlm.nih.gov/pubmed/34947727 http://dx.doi.org/10.3390/nano11123378 |
Ejemplares similares
-
Unveiling the detection dynamics of semiconductor nanowire photodetectors by terahertz near-field nanoscopy
por: Pogna, Eva A. A., et al.
Publicado: (2020) -
Se-doping dependence of the transport properties in CBE-grown InAs nanowire field effect transistors
por: Viti, Leonardo, et al.
Publicado: (2012) -
Surface Nano-Patterning for the Bottom-Up Growth of III-V Semiconductor Nanowire Ordered Arrays
por: Demontis, Valeria, et al.
Publicado: (2021) -
Self-Catalyzed InSb/InAs Quantum Dot Nanowires
por: Arif, Omer, et al.
Publicado: (2021) -
Selective-Area Epitaxy of InGaAsP Buffer Multilayer for In-Plane InAs Nanowire Integration
por: Zannier, Valentina, et al.
Publicado: (2022)