Two-Channel VO(2) Memory Meta-Device for Terahertz Waves

Vanadium oxide (VO(2)), as one of the classical strongly correlated oxides with a reversible and sharp insulator-metal transition (IMT), enables many applications in dynamic terahertz (THz) wave control. Recently, due to the inherent phase transition hysteresis feature, VO(2) has shown favorable application prospects in memory-related devices once combined with metamaterials or metasurfaces. However, to date, VO(2)-based memory meta-devices are usually in a single-channel read/write mode, which limits their storage capacity and speed. In this paper, we propose a reconfigurable meta-memory based on VO(2), which favors a two-channel read/write mode. Our design consists of a pair of large and small split-ring resonators, and the corresponding VO(2) patterns are embedded in the gap locations. By controlling the external power supply, the two operation bands can be controlled independently to achieve at least four amplitude states, including “00”, “01”, “10”, and “11”, which results in a two-channel storage function. In addition, our research may provide prospective applications in fields such as THz switching, photon storage, and THz communication systems in the future.