New Submicron Low Gate Leakage In(0.52)Al(0.48)As-In(0.7)Ga(0.3)As pHEMT for Low-Noise Applications

Conventional pseudomorphic high electron mobility transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity and are hence attractive for the fabrication of three-terminal low-noise and high-frequency devices, which operate at room temperature...

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Detalles Bibliográficos
Autores principales: Packeer Mohamed, Mohamed Fauzi, Mohamed Omar, Mohamad Faiz, Akbar Jalaludin Khan, Muhammad Firdaus, Ghazali, Nor Azlin, Hairi, Mohd Hendra, Falina, Shaili, Samsol Baharin, Mohd Syamsul Nasyriq
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705487/
https://www.ncbi.nlm.nih.gov/pubmed/34945350
http://dx.doi.org/10.3390/mi12121497

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8705487/
https://www.ncbi.nlm.nih.gov/pubmed/34945350
http://dx.doi.org/10.3390/mi12121497

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