Cargando…
Epitaxial Growth of Uniform Single-Layer and Bilayer Graphene with Assistance of Nitrogen Plasma
Graphene was reported as the first-discovered two-dimensional material, and the thermal decomposition of SiC is a feasible route to prepare graphene films. However, it is difficult to obtain a uniform single-layer graphene avoiding the coexistence of multilayer graphene islands or bare substrate hol...
Autores principales: | Jin, Shaoen, Zong, Junyu, Chen, Wang, Tian, Qichao, Qiu, Xiaodong, Liu, Gan, Zheng, Hang, Xi, Xiaoxiang, Gao, Libo, Wang, Can, Zhang, Yi |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706778/ https://www.ncbi.nlm.nih.gov/pubmed/34947567 http://dx.doi.org/10.3390/nano11123217 |
Ejemplares similares
-
Thickness-Dependent Evolutions of Surface Reconstruction and Band Structures in Epitaxial β–In(2)Se(3) Thin Films
por: Meng, Qinghao, et al.
Publicado: (2023) -
Interlayer epitaxy of wafer-scale high-quality uniform AB-stacked bilayer graphene films on liquid Pt(3)Si/solid Pt
por: Ma, Wei, et al.
Publicado: (2019) -
Pinning and Anharmonic Phonon Effect of Quasi-Free-Standing Bilayer Epitaxial Graphene on SiC
por: Sun, Li, et al.
Publicado: (2022) -
Understanding of the Electrochemical Behavior of Lithium at Bilayer-Patched Epitaxial Graphene/4H-SiC
por: Shtepliuk, Ivan, et al.
Publicado: (2022) -
The InN epitaxy via controlling In bilayer
por: Zhou, Jin, et al.
Publicado: (2014)