Stability of SiN(x) Prepared by Plasma-Enhanced Chemical Vapor Deposition at Low Temperature

In this paper, the environmental stability of silicon nitride (SiNx) films deposited at 80 °C by plasma-enhanced chemical vapor deposition was studied systematically. X-ray photoelectron spectroscopy and Fourier transform infrared reflection were used to analyze the element content and atomic bond s...

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Detalles Bibliográficos
Autores principales: Zhang, Chi, Wu, Majiaqi, Wang, Pengchang, Jian, Maoliang, Zhang, Jianhua, Yang, Lianqiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706910/
https://www.ncbi.nlm.nih.gov/pubmed/34947712
http://dx.doi.org/10.3390/nano11123363

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8706910/
https://www.ncbi.nlm.nih.gov/pubmed/34947712
http://dx.doi.org/10.3390/nano11123363

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