Cargando…
A Hybrid Active Neutral Point Clamped Inverter Utilizing Si and Ga(2)O(3) Semiconductors: Modelling and Performance Analysis
In this paper, the performance of an active neutral point clamped (ANPC) inverter is evaluated, which is developed utilizing both silicon (Si) and gallium trioxide (Ga(2)O(3)) devices. The hybridization of semiconductor devices is performed since the production volume and fabrication of ultra-wide b...
Autores principales: | Meraj, Sheikh Tanzim, Yahaya, Nor Zaihar, Hossain Lipu, Molla Shahadat, Islam, Jahedul, Haw, Law Kah, Hasan, Kamrul, Miah, Md. Sazal, Ansari, Shaheer, Hussain, Aini |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707070/ https://www.ncbi.nlm.nih.gov/pubmed/34945316 http://dx.doi.org/10.3390/mi12121466 |
Ejemplares similares
-
Three-Phase Six-Level Multilevel Voltage Source Inverter: Modeling and Experimental Validation
por: Meraj, Sheikh Tanzim, et al.
Publicado: (2021) -
A Novel Non-Isolated High-Gain Non-Inverting Interleaved DC–DC Converter
por: Mumtaz, Farhan, et al.
Publicado: (2023) -
Excellent Light Confinement of Hemiellipsoid- and Inverted Hemiellipsoid-Modified Semiconductor Nanowire Arrays
por: Chen, Xinyu, et al.
Publicado: (2018) -
Marcus inverted region of charge transfer from low-dimensional semiconductor materials
por: Wang, Junhui, et al.
Publicado: (2021) -
Photo-Induced Spin Dynamics in Semiconductor Quantum Wells
por: Miah, M Idrish
Publicado: (2009)