Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications

In this study, we theoretically investigated the effect of step gate work function on the InGaAs p-TFET device, which is formed by dual material gate (DMG). We analyzed the performance parameters of the device for low power digital and analog applications based on the gate work function difference (...

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Detalles Bibliográficos
Autores principales: Azam, Sayed Md Tariful, Bakibillah, Abu Saleh Md, Hasan, Md Tanvir, Kamal, Md Abdus Samad
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707473/
https://www.ncbi.nlm.nih.gov/pubmed/34947514
http://dx.doi.org/10.3390/nano11123166

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707473/
https://www.ncbi.nlm.nih.gov/pubmed/34947514
http://dx.doi.org/10.3390/nano11123166

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