Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator

The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experimen...

Descripción completa

Detalles Bibliográficos
Autores principales: Gusev, Gennady M., Kvon, Ze D., Levin, Alexander D., Mikhailov, Nikolay N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707520/
https://www.ncbi.nlm.nih.gov/pubmed/34947713
http://dx.doi.org/10.3390/nano11123364
Descripción
Sumario:The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.

Ejemplares similares