Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator

The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experimen...

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Autores principales: Gusev, Gennady M., Kvon, Ze D., Levin, Alexander D., Mikhailov, Nikolay N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707520/
https://www.ncbi.nlm.nih.gov/pubmed/34947713
http://dx.doi.org/10.3390/nano11123364
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author Gusev, Gennady M.
Kvon, Ze D.
Levin, Alexander D.
Mikhailov, Nikolay N.
author_facet Gusev, Gennady M.
Kvon, Ze D.
Levin, Alexander D.
Mikhailov, Nikolay N.
author_sort Gusev, Gennady M.
collection PubMed
description The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering.
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spelling pubmed-87075202021-12-25 Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator Gusev, Gennady M. Kvon, Ze D. Levin, Alexander D. Mikhailov, Nikolay N. Nanomaterials (Basel) Article The thermoelectric response of 80 nm-thick strained HgTe films of a three-dimensional topological insulator (3D TI) has been studied experimentally. An ambipolar thermopower is observed where the Fermi energy moves from conducting to the valence bulk band. The comparison between theory and experiment shows that the thermopower is mostly due to the phonon drag contribution. In the region where the 2D Dirac electrons coexist with bulk hole states, the Seebeck coefficient is modified due to 2D electron–3D hole scattering. MDPI 2021-12-11 /pmc/articles/PMC8707520/ /pubmed/34947713 http://dx.doi.org/10.3390/nano11123364 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Gusev, Gennady M.
Kvon, Ze D.
Levin, Alexander D.
Mikhailov, Nikolay N.
Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator
title Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator
title_full Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator
title_fullStr Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator
title_full_unstemmed Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator
title_short Thermoelectric Transport in a Three-Dimensional HgTe Topological Insulator
title_sort thermoelectric transport in a three-dimensional hgte topological insulator
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8707520/
https://www.ncbi.nlm.nih.gov/pubmed/34947713
http://dx.doi.org/10.3390/nano11123364
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AT levinalexanderd thermoelectrictransportinathreedimensionalhgtetopologicalinsulator
AT mikhailovnikolayn thermoelectrictransportinathreedimensionalhgtetopologicalinsulator

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