Manipulable Electronic and Optical Properties of Two-Dimensional MoSTe/MoGe(2)N(4) van der Waals Heterostructures

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe(2)N(4) vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te(4)-MoSTe/MoGe(2)N(4) vdWH is a semimetal, while S(4)-MoSTe/MoGe(2)N(4) vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe(2)N(4) vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe(2)N(4) vdWH is an excellent candidate for high-performance optoelectronic devices.