Low-Field Electron Emission Capability of Thin Films on Flat Silicon Substrates: Experiments with Mo and General Model for Refractory Metals and Carbon

Herein, we describe a study of the phenomenon of field-induced electron emission from thin films deposited on flat Si substrates. Films of Mo with an effective thickness of 6–10 nm showed room-temperature low-field emissivity; a 100 nA current was extracted at macroscopic field magnitudes as low as...

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Detalles Bibliográficos
Autores principales: Bizyaev, Ivan, Gabdullin, Pavel, Chumak, Maxim, Babyuk, Vladislav, Davydov, Sergey, Osipov, Vasilii, Kuznetsov, Alexey, Kvashenkina, Olga, Arkhipov, Alexander
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709470/
https://www.ncbi.nlm.nih.gov/pubmed/34947699
http://dx.doi.org/10.3390/nano11123350

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8709470/
https://www.ncbi.nlm.nih.gov/pubmed/34947699
http://dx.doi.org/10.3390/nano11123350

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