Effect of a Rubidium Chloride Carrier Confinement Layer on the Characteristics of CsPbBr(3) Perovskite Light-Emitting Diodes

This work describes the effect of a rubidium chloride (RbCl) interlayer in CsPbBr(3) perovskite light-emitting diode (LED) structures. RbCl crystallites exhibited polyhedral structures and lattice parameters similar to those of CsPbBr(3) perovskite crystallites. The lattice mismatch between the RbCl...

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Detalles Bibliográficos
Autores principales: Li, Chi-Ta, Lee, Kuan-Lin, Wang, Sea-Fue, Chen, Lung-Chien
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8724480/
https://www.ncbi.nlm.nih.gov/pubmed/34978612
http://dx.doi.org/10.1186/s11671-021-03641-9
Descripción
Sumario:This work describes the effect of a rubidium chloride (RbCl) interlayer in CsPbBr(3) perovskite light-emitting diode (LED) structures. RbCl crystallites exhibited polyhedral structures and lattice parameters similar to those of CsPbBr(3) perovskite crystallites. The lattice mismatch between the RbCl interlayer and CsPbBr(3) active layer was only approximately 2%. The devices exhibited the best quality and performance when RbCl was used as the nucleation and carrier confinement layer. The crystallite sizes of CsPbBr(3) with 0.2-, 0.5-, and 1-nm-thick RbCl bottom layers were 55.1, 65.4, and 55.1 nm, respectively. The full width at half maximum (FWHM) of the photoluminescence (PL) emission peak for CsPbBr(3) with the RbCl bottom layer was 0.096 eV.

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