Embedded Micro-detectors for EUV Exposure Control in FinFET CMOS Technology

An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. T...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Chien-Ping, Lin, Burn Jeng, Wu, Pin-Jiun, Shih, Jiaw-Ren, Chih, Yue-Der, Chang, Jonathan, Lin, Chrong Jung, King, Ya-Chin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8733134/
https://www.ncbi.nlm.nih.gov/pubmed/34985604
http://dx.doi.org/10.1186/s11671-021-03645-5
Descripción
Sumario:An on-wafer micro-detector for in situ EUV (wavelength of 13.5 nm) detection featuring FinFET CMOS compatibility, 1 T pixel and battery-less sensing is demonstrated. Moreover, the detection results can be written in the in-pixel storage node for days, enabling off-line and non-destructive reading. The high spatial resolution micro-detectors can be used to extract the actual parameters of the incident EUV on wafers, including light intensity, exposure time and energy, key to optimization of lithographic processes in 5 nm FinFET technology and beyond.

Ejemplares similares