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Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs
The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thic...
Autores principales: | , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2021
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746177/ https://www.ncbi.nlm.nih.gov/pubmed/35009382 http://dx.doi.org/10.3390/ma15010237 |
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author | Hajdel, Mateusz Chlipała, Mikolaj Siekacz, Marcin Turski, Henryk Wolny, Paweł Nowakowski-Szkudlarek, Krzesimir Feduniewicz-Żmuda, Anna Skierbiszewski, Czeslaw Muziol, Grzegorz |
author_facet | Hajdel, Mateusz Chlipała, Mikolaj Siekacz, Marcin Turski, Henryk Wolny, Paweł Nowakowski-Szkudlarek, Krzesimir Feduniewicz-Żmuda, Anna Skierbiszewski, Czeslaw Muziol, Grzegorz |
author_sort | Hajdel, Mateusz |
collection | PubMed |
description | The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thicknesses—2.6, 6.5, 7.8, 12, and 15 nm. In the case of the thinnest QW, we observed a typical effect of screening of the built-in field manifested with a blue shift of the electroluminescence spectrum at high current densities, whereas the LEDs with 6.5 and 7.8 nm QWs exhibited extremely high blue shift at low current densities accompanied by complex spectrum with multiple optical transitions. On the other hand, LEDs with the thickest QWs showed a stable, single-peak emission throughout the whole current density range. In order to obtain insight into the physical mechanisms behind this complex behavior, we performed self-consistent Schrodinger–Poisson simulations. We show that variation in the emission spectra between the samples is related to changes in the carrier density and differences in the magnitude of screening of the built-in field inside QWs. Moreover, we show that the excited states play a major role in carrier recombination for all QWs, apart from the thinnest one. |
format | Online Article Text |
id | pubmed-8746177 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2021 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-87461772022-01-11 Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs Hajdel, Mateusz Chlipała, Mikolaj Siekacz, Marcin Turski, Henryk Wolny, Paweł Nowakowski-Szkudlarek, Krzesimir Feduniewicz-Żmuda, Anna Skierbiszewski, Czeslaw Muziol, Grzegorz Materials (Basel) Article The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thicknesses—2.6, 6.5, 7.8, 12, and 15 nm. In the case of the thinnest QW, we observed a typical effect of screening of the built-in field manifested with a blue shift of the electroluminescence spectrum at high current densities, whereas the LEDs with 6.5 and 7.8 nm QWs exhibited extremely high blue shift at low current densities accompanied by complex spectrum with multiple optical transitions. On the other hand, LEDs with the thickest QWs showed a stable, single-peak emission throughout the whole current density range. In order to obtain insight into the physical mechanisms behind this complex behavior, we performed self-consistent Schrodinger–Poisson simulations. We show that variation in the emission spectra between the samples is related to changes in the carrier density and differences in the magnitude of screening of the built-in field inside QWs. Moreover, we show that the excited states play a major role in carrier recombination for all QWs, apart from the thinnest one. MDPI 2021-12-29 /pmc/articles/PMC8746177/ /pubmed/35009382 http://dx.doi.org/10.3390/ma15010237 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hajdel, Mateusz Chlipała, Mikolaj Siekacz, Marcin Turski, Henryk Wolny, Paweł Nowakowski-Szkudlarek, Krzesimir Feduniewicz-Żmuda, Anna Skierbiszewski, Czeslaw Muziol, Grzegorz Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs |
title | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs |
title_full | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs |
title_fullStr | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs |
title_full_unstemmed | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs |
title_short | Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs |
title_sort | dependence of ingan quantum well thickness on the nature of optical transitions in leds |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746177/ https://www.ncbi.nlm.nih.gov/pubmed/35009382 http://dx.doi.org/10.3390/ma15010237 |
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