Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs

The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thic...

Descripción completa

Detalles Bibliográficos
Autores principales: Hajdel, Mateusz, Chlipała, Mikolaj, Siekacz, Marcin, Turski, Henryk, Wolny, Paweł, Nowakowski-Szkudlarek, Krzesimir, Feduniewicz-Żmuda, Anna, Skierbiszewski, Czeslaw, Muziol, Grzegorz
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746177/
https://www.ncbi.nlm.nih.gov/pubmed/35009382
http://dx.doi.org/10.3390/ma15010237

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746177/
https://www.ncbi.nlm.nih.gov/pubmed/35009382
http://dx.doi.org/10.3390/ma15010237

Ejemplares similares