Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector

4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He(+) in the fluence range of 5 × 10(11) ÷ 5 × 10(14) ion/cm(2) in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (20...

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Detalles Bibliográficos
Autores principales: Sciuto, Antonella, Calcagno, Lucia, Di Franco, Salvatore, Pellegrino, Domenico, Selgi, Lorenzo Maurizio, D’Arrigo, Giuseppe
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746246/
https://www.ncbi.nlm.nih.gov/pubmed/35009409
http://dx.doi.org/10.3390/ma15010264

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746246/
https://www.ncbi.nlm.nih.gov/pubmed/35009409
http://dx.doi.org/10.3390/ma15010264

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