Cargando…
Radiation Hardness of 4H-SiC P-N Junction UV Photo-Detector
4H-SiC based p-n junction UV photo-detectors were irradiated with 600 keV He(+) in the fluence range of 5 × 10(11) ÷ 5 × 10(14) ion/cm(2) in order to investigate their radiation hardness. The effects of irradiation on the electro-optical performance were monitored in dark condition and in the UV (20...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2021
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746246/ https://www.ncbi.nlm.nih.gov/pubmed/35009409 http://dx.doi.org/10.3390/ma15010264 |