Investigation of the Effects of Rapid Thermal Annealing on the Electron Transport Mechanism in Nitrogen-Doped ZnO Thin Films Grown by RF Magnetron Sputtering

Nitrogen-doped ZnO (ZnO:N) thin films, deposited on Si(100) substrates by RF magnetron sputtering in a gas mixture of argon, oxygen, and nitrogen at different ratios followed by Rapid Thermal Annealing (RTA) at 400 °C and 550 °C, were studied in the present work. Raman and photoluminescence spectros...

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Detalles Bibliográficos
Autores principales: Simeonov, Simeon, Szekeres, Anna, Spassov, Dencho, Anastasescu, Mihai, Stanculescu, Ioana, Nicolescu, Madalina, Aperathitis, Elias, Modreanu, Mircea, Gartner, Mariuca
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746560/
https://www.ncbi.nlm.nih.gov/pubmed/35009969
http://dx.doi.org/10.3390/nano12010019

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746560/
https://www.ncbi.nlm.nih.gov/pubmed/35009969
http://dx.doi.org/10.3390/nano12010019

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