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Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions

With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growin...

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Detalles Bibliográficos
Autores principales: Guo, Jing, Liu, Kai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746702/
https://www.ncbi.nlm.nih.gov/pubmed/35010060
http://dx.doi.org/10.3390/nano12010110
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author Guo, Jing
Liu, Kai
author_facet Guo, Jing
Liu, Kai
author_sort Guo, Jing
collection PubMed
description With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe(2) exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T′ and vice versa, owing to the extremely small energy barrier between these two phases. MoTe(2) thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe(2) hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe(2), demonstrate the approaches to the construction of 2D MoTe(2) hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field.
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spelling pubmed-87467022022-01-11 Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions Guo, Jing Liu, Kai Nanomaterials (Basel) Review With the demand for low contact resistance and a clean interface in high-performance field-effect transistors, two-dimensional (2D) hetero-phase homojunctions, which comprise a semiconducting phase of a material as the channel and a metallic phase of the material as electrodes, have attracted growing attention in recent years. In particular, MoTe(2) exhibits intriguing properties and its phase is easily altered from semiconducting 2H to metallic 1T′ and vice versa, owing to the extremely small energy barrier between these two phases. MoTe(2) thus finds potential applications in electronics as a representative 2D material with multiple phases. In this review, we briefly summarize recent progress in 2D MoTe(2) hetero-phase homojunctions. We first introduce the properties of the diverse phases of MoTe(2), demonstrate the approaches to the construction of 2D MoTe(2) hetero-phase homojunctions, and then show the applications of the homojunctions. Lastly, we discuss the prospects and challenges in this research field. MDPI 2021-12-30 /pmc/articles/PMC8746702/ /pubmed/35010060 http://dx.doi.org/10.3390/nano12010110 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Guo, Jing
Liu, Kai
Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions
title Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions
title_full Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions
title_fullStr Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions
title_full_unstemmed Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions
title_short Recent Progress in Two-Dimensional MoTe(2) Hetero-Phase Homojunctions
title_sort recent progress in two-dimensional mote(2) hetero-phase homojunctions
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746702/
https://www.ncbi.nlm.nih.gov/pubmed/35010060
http://dx.doi.org/10.3390/nano12010110
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