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Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes

Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diod...

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Autores principales: Wen, Ming-Ru, Yang, Sheng-Hsiung, Chen, Wei-Sheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746833/
https://www.ncbi.nlm.nih.gov/pubmed/35010104
http://dx.doi.org/10.3390/nano12010154
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author Wen, Ming-Ru
Yang, Sheng-Hsiung
Chen, Wei-Sheng
author_facet Wen, Ming-Ru
Yang, Sheng-Hsiung
Chen, Wei-Sheng
author_sort Wen, Ming-Ru
collection PubMed
description Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m(−2) and a current efficiency of 35.1 cd A(−1) from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications.
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spelling pubmed-87468332022-01-11 Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes Wen, Ming-Ru Yang, Sheng-Hsiung Chen, Wei-Sheng Nanomaterials (Basel) Article Copper thiocyanate (CuSCN) has been gradually utilized as the hole injection layer (HIL) within optoelectronic devices, owing to its high transparency in the visible range, moderate hole mobility, and desirable environmental stability. In this research, we demonstrate quantum dot light-emitting diodes (QLEDs) with high brightness and current efficiency by doping 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) in CuSCN as the HIL. The experimental results indicated a smoother surface of CuSCN upon F4TCNQ doping. The augmentation in hole mobility of CuSCN and carrier injection to reach balanced charge transport in QLEDs were confirmed. A maximum brightness of 169,230 cd m(−2) and a current efficiency of 35.1 cd A(−1) from the optimized device were received by adding 0.02 wt% of F4TCNQ in CuSCN, revealing promising use in light-emitting applications. MDPI 2022-01-01 /pmc/articles/PMC8746833/ /pubmed/35010104 http://dx.doi.org/10.3390/nano12010154 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Wen, Ming-Ru
Yang, Sheng-Hsiung
Chen, Wei-Sheng
Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes
title Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes
title_full Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes
title_fullStr Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes
title_full_unstemmed Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes
title_short Solution-Processed Smooth Copper Thiocyanate Layer with Improved Hole Injection Ability for the Fabrication of Quantum Dot Light-Emitting Diodes
title_sort solution-processed smooth copper thiocyanate layer with improved hole injection ability for the fabrication of quantum dot light-emitting diodes
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8746833/
https://www.ncbi.nlm.nih.gov/pubmed/35010104
http://dx.doi.org/10.3390/nano12010154
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AT chenweisheng solutionprocessedsmoothcopperthiocyanatelayerwithimprovedholeinjectionabilityforthefabricationofquantumdotlightemittingdiodes