Current-Induced Spin Photocurrent in GaAs at Room Temperature

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarizatio...

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Detalles Bibliográficos
Autores principales: Zhang, Yang, Liu, Yu, Xue, Xiao-Lan, Zeng, Xiao-Lin, Wu, Jing, Shi, Li-Wei, Chen, Yong-Hai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8749936/
https://www.ncbi.nlm.nih.gov/pubmed/35009939
http://dx.doi.org/10.3390/s22010399
Descripción
Sumario:Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.

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