Current-Induced Spin Photocurrent in GaAs at Room Temperature

Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarizatio...

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Detalles Bibliográficos
Autores principales: Zhang, Yang, Liu, Yu, Xue, Xiao-Lan, Zeng, Xiao-Lin, Wu, Jing, Shi, Li-Wei, Chen, Yong-Hai
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8749936/
https://www.ncbi.nlm.nih.gov/pubmed/35009939
http://dx.doi.org/10.3390/s22010399
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author Zhang, Yang
Liu, Yu
Xue, Xiao-Lan
Zeng, Xiao-Lin
Wu, Jing
Shi, Li-Wei
Chen, Yong-Hai
author_facet Zhang, Yang
Liu, Yu
Xue, Xiao-Lan
Zeng, Xiao-Lin
Wu, Jing
Shi, Li-Wei
Chen, Yong-Hai
author_sort Zhang, Yang
collection PubMed
description Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature.
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spelling pubmed-87499362022-01-12 Current-Induced Spin Photocurrent in GaAs at Room Temperature Zhang, Yang Liu, Yu Xue, Xiao-Lan Zeng, Xiao-Lin Wu, Jing Shi, Li-Wei Chen, Yong-Hai Sensors (Basel) Article Circularly polarized photocurrent, observed in p-doped bulk GaAs, varies nonlinearly with the applied bias voltage at room temperature. It has been explored that this phenomenon arises from the current-induced spin polarization in GaAs. In addition, we found that the current-induced spin polarization direction of p-doped bulk GaAs grown in the (001) direction lies in the sample plane and is perpendicular to the applied electric field, which is the same as that in GaAs quantum well. This research indicates that circularly polarized photocurrent is a new optical approach to investigate the current-induced spin polarization at room temperature. MDPI 2022-01-05 /pmc/articles/PMC8749936/ /pubmed/35009939 http://dx.doi.org/10.3390/s22010399 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhang, Yang
Liu, Yu
Xue, Xiao-Lan
Zeng, Xiao-Lin
Wu, Jing
Shi, Li-Wei
Chen, Yong-Hai
Current-Induced Spin Photocurrent in GaAs at Room Temperature
title Current-Induced Spin Photocurrent in GaAs at Room Temperature
title_full Current-Induced Spin Photocurrent in GaAs at Room Temperature
title_fullStr Current-Induced Spin Photocurrent in GaAs at Room Temperature
title_full_unstemmed Current-Induced Spin Photocurrent in GaAs at Room Temperature
title_short Current-Induced Spin Photocurrent in GaAs at Room Temperature
title_sort current-induced spin photocurrent in gaas at room temperature
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8749936/
https://www.ncbi.nlm.nih.gov/pubmed/35009939
http://dx.doi.org/10.3390/s22010399
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