Signatures of enhanced out-of-plane polarization in asymmetric BaTiO(3) superlattices integrated on silicon

In order to bring the diverse functionalities of transition metal oxides into modern electronics, it is imperative to integrate oxide films with controllable properties onto the silicon platform. Here, we present asymmetric LaMnO(3)/BaTiO(3)/SrTiO(3) superlattices fabricated on silicon with layer thickness control at the unit-cell level. By harnessing the coherent strain between the constituent layers, we overcome the biaxial thermal tension from silicon and stabilize c-axis oriented BaTiO(3) layers with substantially enhanced tetragonality, as revealed by atomically resolved scanning transmission electron microscopy. Optical second harmonic generation measurements signify a predominant out-of-plane polarized state with strongly enhanced net polarization in the tricolor superlattices, as compared to the BaTiO(3) single film and conventional BaTiO(3)/SrTiO(3) superlattice grown on silicon. Meanwhile, this coherent strain in turn suppresses the magnetism of LaMnO(3) as the thickness of BaTiO(3) increases. Our study raises the prospect of designing artificial oxide superlattices on silicon with tailored functionalities.