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Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy

A broad family of the nowadays studied low-dimensional systems, including 2D materials, demonstrate many fascinating properties, which however depend on the atomic composition as well as on the system dimensionality. Therefore, the studies of the electronic correlation effects in the new 2D material...

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Autores principales: Jin, Yichen, Yan, Mouhui, Kremer, Tomislav, Voloshina, Elena, Dedkov, Yuriy
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8760309/
https://www.ncbi.nlm.nih.gov/pubmed/35031642
http://dx.doi.org/10.1038/s41598-021-04557-1
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author Jin, Yichen
Yan, Mouhui
Kremer, Tomislav
Voloshina, Elena
Dedkov, Yuriy
author_facet Jin, Yichen
Yan, Mouhui
Kremer, Tomislav
Voloshina, Elena
Dedkov, Yuriy
author_sort Jin, Yichen
collection PubMed
description A broad family of the nowadays studied low-dimensional systems, including 2D materials, demonstrate many fascinating properties, which however depend on the atomic composition as well as on the system dimensionality. Therefore, the studies of the electronic correlation effects in the new 2D materials is of paramount importance for the understanding of their transport, optical and catalytic properties. Here, by means of electron spectroscopy methods in combination with density functional theory calculations we investigate the electronic structure of a new layered van der Waals [Formula: see text] (X: S, Se) materials. Using systematic resonant photoelectron spectroscopy studies we observed strong resonant behavior for the peaks associated with the [Formula: see text] final state at low binding energies for these materials. Such observations clearly assign [Formula: see text] to the class of Mott–Hubbard type insulators for which the top of the valence band is formed by the hybrid Fe-S/Se electronic states. These observations are important for the deep understanding of this new class of materials and draw perspectives for their further applications in different application areas, like (opto)spintronics and catalysis.
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spelling pubmed-87603092022-01-18 Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy Jin, Yichen Yan, Mouhui Kremer, Tomislav Voloshina, Elena Dedkov, Yuriy Sci Rep Article A broad family of the nowadays studied low-dimensional systems, including 2D materials, demonstrate many fascinating properties, which however depend on the atomic composition as well as on the system dimensionality. Therefore, the studies of the electronic correlation effects in the new 2D materials is of paramount importance for the understanding of their transport, optical and catalytic properties. Here, by means of electron spectroscopy methods in combination with density functional theory calculations we investigate the electronic structure of a new layered van der Waals [Formula: see text] (X: S, Se) materials. Using systematic resonant photoelectron spectroscopy studies we observed strong resonant behavior for the peaks associated with the [Formula: see text] final state at low binding energies for these materials. Such observations clearly assign [Formula: see text] to the class of Mott–Hubbard type insulators for which the top of the valence band is formed by the hybrid Fe-S/Se electronic states. These observations are important for the deep understanding of this new class of materials and draw perspectives for their further applications in different application areas, like (opto)spintronics and catalysis. Nature Publishing Group UK 2022-01-14 /pmc/articles/PMC8760309/ /pubmed/35031642 http://dx.doi.org/10.1038/s41598-021-04557-1 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open AccessThis article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons licence, and indicate if changes were made. The images or other third party material in this article are included in the article's Creative Commons licence, unless indicated otherwise in a credit line to the material. If material is not included in the article's Creative Commons licence and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this licence, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Article
Jin, Yichen
Yan, Mouhui
Kremer, Tomislav
Voloshina, Elena
Dedkov, Yuriy
Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy
title Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy
title_full Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy
title_fullStr Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy
title_full_unstemmed Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy
title_short Mott–Hubbard insulating state for the layered van der Waals [Formula: see text] (X: S, Se) as revealed by NEXAFS and resonant photoelectron spectroscopy
title_sort mott–hubbard insulating state for the layered van der waals [formula: see text] (x: s, se) as revealed by nexafs and resonant photoelectron spectroscopy
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8760309/
https://www.ncbi.nlm.nih.gov/pubmed/35031642
http://dx.doi.org/10.1038/s41598-021-04557-1
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