1.3 kV Vertical GaN-Based Trench MOSFETs on 4-Inch Free Standing GaN Wafer

In this work, a vertical gallium nitride (GaN)-based trench MOSFET on 4-inch free-standing GaN substrate is presented with threshold voltage of 3.15 V, specific on-resistance of 1.93 mΩ·cm(2), breakdown voltage of 1306 V, and figure of merit of 0.88 GW/cm(2). High-quality and stable MOS interface is...

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Detalles Bibliográficos
Autores principales: He, Wei, Li, Jian, Liao, Zeliang, Lin, Feng, Wu, Junye, Wang, Bing, Wang, Maojun, Liu, Nan, Chiu, Hsien-Chin, Kuo, Hao-Chung, Lin, Xinnan, Li, Jingbo, Liu, Xinke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2022
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8761181/
https://www.ncbi.nlm.nih.gov/pubmed/35032235
http://dx.doi.org/10.1186/s11671-022-03653-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8761181/
https://www.ncbi.nlm.nih.gov/pubmed/35032235
http://dx.doi.org/10.1186/s11671-022-03653-z

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