Modeling electronic and optical properties of III–V quantum dots—selected recent developments

Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we f...

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Autores principales: Mittelstädt, Alexander, Schliwa, Andrei, Klenovský, Petr
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Review Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8761749/
https://www.ncbi.nlm.nih.gov/pubmed/35034962
http://dx.doi.org/10.1038/s41377-021-00700-9
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author Mittelstädt, Alexander
Schliwa, Andrei
Klenovský, Petr
author_facet Mittelstädt, Alexander
Schliwa, Andrei
Klenovský, Petr
author_sort Mittelstädt, Alexander
collection PubMed
description Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In(1−x)Ga(x) As(y)Sb(1−y)/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.
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spelling pubmed-87617492022-01-26 Modeling electronic and optical properties of III–V quantum dots—selected recent developments Mittelstädt, Alexander Schliwa, Andrei Klenovský, Petr Light Sci Appl Review Article Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In(1−x)Ga(x) As(y)Sb(1−y)/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing. Nature Publishing Group UK 2022-01-17 /pmc/articles/PMC8761749/ /pubmed/35034962 http://dx.doi.org/10.1038/s41377-021-00700-9 Text en © The Author(s) 2022 https://creativecommons.org/licenses/by/4.0/Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) .
spellingShingle Review Article
Mittelstädt, Alexander
Schliwa, Andrei
Klenovský, Petr
Modeling electronic and optical properties of III–V quantum dots—selected recent developments
title Modeling electronic and optical properties of III–V quantum dots—selected recent developments
title_full Modeling electronic and optical properties of III–V quantum dots—selected recent developments
title_fullStr Modeling electronic and optical properties of III–V quantum dots—selected recent developments
title_full_unstemmed Modeling electronic and optical properties of III–V quantum dots—selected recent developments
title_short Modeling electronic and optical properties of III–V quantum dots—selected recent developments
title_sort modeling electronic and optical properties of iii–v quantum dots—selected recent developments
topic Review Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8761749/
https://www.ncbi.nlm.nih.gov/pubmed/35034962
http://dx.doi.org/10.1038/s41377-021-00700-9
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