Cargando…
Modeling electronic and optical properties of III–V quantum dots—selected recent developments
Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we f...
Autores principales: | Mittelstädt, Alexander, Schliwa, Andrei, Klenovský, Petr |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8761749/ https://www.ncbi.nlm.nih.gov/pubmed/35034962 http://dx.doi.org/10.1038/s41377-021-00700-9 |
Ejemplares similares
-
Dimension-Dependent Phenomenological Model of Excitonic Electric Dipole in InGaAs Quantum Dots
por: Steindl, Petr, et al.
Publicado: (2022) -
Excitonic structure and pumping power dependent emission blue-shift of type-II quantum dots
por: Klenovský, Petr, et al.
Publicado: (2017) -
Optical properties of semiconductor quantum dots
por: Woggon, Ulrike
Publicado: (1997) -
Energy/Electron Transfer Switch for Controlling Optical Properties of Silicon Quantum Dots
por: Abdelhameed, Mohammed, et al.
Publicado: (2018) -
Optical Absorption on Electron Quantum-Confined States of Perovskite Quantum Dots
por: Pokutnii, Serhii I., et al.
Publicado: (2022)