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Controlling the Anionic Ratio and Gradient in Kesterite Technology

[Image: see text] Accurate anionic control during the formation of chalcogenide solid solutions is fundamental for tuning the physicochemical properties of this class of materials. Compositional grading is the key aspect of band gap engineering and is especially valuable at the device interfaces for...

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Autores principales: Andrade-Arvizu, Jacob, Rubio, Robert Fonoll, Izquierdo-Roca, Victor, Becerril-Romero, Ignacio, Sylla, Diouldé, Vidal-Fuentes, Pedro, Li-Kao, Zacharie Jehl, Thomere, Angélica, Giraldo, Sergio, Tiwari, Kunal, Resalati, Shahaboddin, Guc, Maxim, Placidi, Marcel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8762644/
https://www.ncbi.nlm.nih.gov/pubmed/34978180
http://dx.doi.org/10.1021/acsami.1c21507
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author Andrade-Arvizu, Jacob
Rubio, Robert Fonoll
Izquierdo-Roca, Victor
Becerril-Romero, Ignacio
Sylla, Diouldé
Vidal-Fuentes, Pedro
Li-Kao, Zacharie Jehl
Thomere, Angélica
Giraldo, Sergio
Tiwari, Kunal
Resalati, Shahaboddin
Guc, Maxim
Placidi, Marcel
author_facet Andrade-Arvizu, Jacob
Rubio, Robert Fonoll
Izquierdo-Roca, Victor
Becerril-Romero, Ignacio
Sylla, Diouldé
Vidal-Fuentes, Pedro
Li-Kao, Zacharie Jehl
Thomere, Angélica
Giraldo, Sergio
Tiwari, Kunal
Resalati, Shahaboddin
Guc, Maxim
Placidi, Marcel
author_sort Andrade-Arvizu, Jacob
collection PubMed
description [Image: see text] Accurate anionic control during the formation of chalcogenide solid solutions is fundamental for tuning the physicochemical properties of this class of materials. Compositional grading is the key aspect of band gap engineering and is especially valuable at the device interfaces for an optimum band alignment, for controlling interface defects and recombination and for optimizing the formation of carrier-selective contacts. However, a simple and reliable technique that allows standardizing anionic compositional profiles is currently missing for kesterites and the feasibility of achieving a compositional gradient remains a challenging task. This work aims at addressing these issues by a simple and innovative technique. It basically consists of first preparing a pure sulfide absorber with a specific thickness followed by the synthesis of a pure selenide part of complementary thickness on top of it. Specifically, the technique is applied to the synthesis of Cu(2)ZnSn(S,Se)(4) and Cu(2)ZnGe(S,Se)(4) kesterite absorbers, and a series of characterizations are performed to understand the anionic redistribution within the absorbers. For identical processing conditions, different Se incorporation dynamics is identified for Sn- and Ge-based kesterites, leading to a homogeneous or graded composition in depth. It is first demonstrated that for Sn-based kesterite the anionic composition can be perfectly controlled through the thicknesses ratio of the sulfide and selenide absorber parts. Then, it is demonstrated that for Ge-based kesterite an anionic (Se–S) gradient is obtained and that by adjusting the processing conditions the composition at the back side can be finely tuned. This technique represents an innovative approach that will help to improve the compositional reproducibility and determine a band gap grading strategy pathway for kesterites. Furthermore, due to its simplicity and reliability, the proposed methodology could be extended to other chalcogenide materials.
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spelling pubmed-87626442022-01-18 Controlling the Anionic Ratio and Gradient in Kesterite Technology Andrade-Arvizu, Jacob Rubio, Robert Fonoll Izquierdo-Roca, Victor Becerril-Romero, Ignacio Sylla, Diouldé Vidal-Fuentes, Pedro Li-Kao, Zacharie Jehl Thomere, Angélica Giraldo, Sergio Tiwari, Kunal Resalati, Shahaboddin Guc, Maxim Placidi, Marcel ACS Appl Mater Interfaces [Image: see text] Accurate anionic control during the formation of chalcogenide solid solutions is fundamental for tuning the physicochemical properties of this class of materials. Compositional grading is the key aspect of band gap engineering and is especially valuable at the device interfaces for an optimum band alignment, for controlling interface defects and recombination and for optimizing the formation of carrier-selective contacts. However, a simple and reliable technique that allows standardizing anionic compositional profiles is currently missing for kesterites and the feasibility of achieving a compositional gradient remains a challenging task. This work aims at addressing these issues by a simple and innovative technique. It basically consists of first preparing a pure sulfide absorber with a specific thickness followed by the synthesis of a pure selenide part of complementary thickness on top of it. Specifically, the technique is applied to the synthesis of Cu(2)ZnSn(S,Se)(4) and Cu(2)ZnGe(S,Se)(4) kesterite absorbers, and a series of characterizations are performed to understand the anionic redistribution within the absorbers. For identical processing conditions, different Se incorporation dynamics is identified for Sn- and Ge-based kesterites, leading to a homogeneous or graded composition in depth. It is first demonstrated that for Sn-based kesterite the anionic composition can be perfectly controlled through the thicknesses ratio of the sulfide and selenide absorber parts. Then, it is demonstrated that for Ge-based kesterite an anionic (Se–S) gradient is obtained and that by adjusting the processing conditions the composition at the back side can be finely tuned. This technique represents an innovative approach that will help to improve the compositional reproducibility and determine a band gap grading strategy pathway for kesterites. Furthermore, due to its simplicity and reliability, the proposed methodology could be extended to other chalcogenide materials. American Chemical Society 2022-01-03 2022-01-12 /pmc/articles/PMC8762644/ /pubmed/34978180 http://dx.doi.org/10.1021/acsami.1c21507 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Andrade-Arvizu, Jacob
Rubio, Robert Fonoll
Izquierdo-Roca, Victor
Becerril-Romero, Ignacio
Sylla, Diouldé
Vidal-Fuentes, Pedro
Li-Kao, Zacharie Jehl
Thomere, Angélica
Giraldo, Sergio
Tiwari, Kunal
Resalati, Shahaboddin
Guc, Maxim
Placidi, Marcel
Controlling the Anionic Ratio and Gradient in Kesterite Technology
title Controlling the Anionic Ratio and Gradient in Kesterite Technology
title_full Controlling the Anionic Ratio and Gradient in Kesterite Technology
title_fullStr Controlling the Anionic Ratio and Gradient in Kesterite Technology
title_full_unstemmed Controlling the Anionic Ratio and Gradient in Kesterite Technology
title_short Controlling the Anionic Ratio and Gradient in Kesterite Technology
title_sort controlling the anionic ratio and gradient in kesterite technology
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8762644/
https://www.ncbi.nlm.nih.gov/pubmed/34978180
http://dx.doi.org/10.1021/acsami.1c21507
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