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Control of the Cu morphology on Ru-passivated and Ru-doped TaN surfaces – promoting growth of 2D conducting copper for CMOS interconnects
Prolonging the lifetime of Cu as a level 1 and level 2 interconnect metal in future nanoelectronic devices is a significant challenge as device dimensions continue to shrink and device structures become more complex. At nanoscale dimensions Cu exhibits high resistivity which prevents its functioning...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2021
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8768880/ https://www.ncbi.nlm.nih.gov/pubmed/35173936 http://dx.doi.org/10.1039/d1sc04708f |