Highly Sensitive NO(2) Detection by TVS-Grown Multilayer MoS(2) Films

[Image: see text] Two-dimensional layered materials have been investigated for sensor applications over the last decade due to their very high specific surface area and excellent electrical characteristics. Although grain boundaries are inevitably present in polycrystalline-layered materials used for real applications, few studies have investigated their effects on sensing properties. In this study, we demonstrate the growth of two distinct MoS(2) films that differ in grain size by means of chemical vapor deposition (CVD) and thermal vapor sulfurization (TVS) methods. Transistor-based sensors are fabricated using these films, and their NO(2) sensing properties are evaluated. The adsorption behavior of NO(2) on MoS(2) is considered in terms of the Langmuir isotherm, and the experimental results can be well fitted by the equation. The CVD-grown film exhibits electrical properties 1–2 orders of magnitude superior to those of the TVS-grown one, which is attributed to the large grain size of the CVD-grown film. In contrast, the sensitivity to NO(2) is unexpectedly found to be higher in the TVS-grown film and is of the same order of a previously reported record value. Transmission electron microscopy observations suggest that the TVS-grown film consists of multiple rotationally oriented grains that are connected by mirror twin grain boundaries. Theoretical calculation results reveal that the adsorption of NO(2) on the grain boundary that we modeled is equal to that on the ideal basal plane surface of MoS(2). In addition, the porous structure in the TVS-grown film may also contribute to enhancing the sensor response to NO(2). This study suggests that a highly sensitive MoS(2) sensor can also be fabricated by using a polycrystalline film with small grain size, which can possibly be applied to other two-dimensional materials.