FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector

Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The indiv...

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Detalles Bibliográficos
Autores principales: Xu, Wangqiong, Lu, Ying, Lei, Weibin, Sui, Fengrui, Ma, Ruru, Qi, Ruijuan, Huang, Rong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2021
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778105/
https://www.ncbi.nlm.nih.gov/pubmed/35056176
http://dx.doi.org/10.3390/mi13010011
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author Xu, Wangqiong
Lu, Ying
Lei, Weibin
Sui, Fengrui
Ma, Ruru
Qi, Ruijuan
Huang, Rong
author_facet Xu, Wangqiong
Lu, Ying
Lei, Weibin
Sui, Fengrui
Ma, Ruru
Qi, Ruijuan
Huang, Rong
author_sort Xu, Wangqiong
collection PubMed
description Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 10(4) AW(−1) and a high photoconductivity gain of 5.0 × 10(6)%, which shows great promise for further optoelectronic device applications.
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spelling pubmed-87781052022-01-22 FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector Xu, Wangqiong Lu, Ying Lei, Weibin Sui, Fengrui Ma, Ruru Qi, Ruijuan Huang, Rong Micromachines (Basel) Article Nanoscale tellurium (Te) materials are promising for advanced optoelectronics owing to their outstanding photoelectrical properties. In this work, high-performance optoelectronic nanodevice based on a single tellurium nanotube (NT) was prepared by focused ion beam (FIB)-assisted technique. The individual Te NT photodetector demonstrates a high photoresponsivity of 1.65 × 10(4) AW(−1) and a high photoconductivity gain of 5.0 × 10(6)%, which shows great promise for further optoelectronic device applications. MDPI 2021-12-22 /pmc/articles/PMC8778105/ /pubmed/35056176 http://dx.doi.org/10.3390/mi13010011 Text en © 2021 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Xu, Wangqiong
Lu, Ying
Lei, Weibin
Sui, Fengrui
Ma, Ruru
Qi, Ruijuan
Huang, Rong
FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector
title FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector
title_full FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector
title_fullStr FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector
title_full_unstemmed FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector
title_short FIB-Assisted Fabrication of Single Tellurium Nanotube Based High Performance Photodetector
title_sort fib-assisted fabrication of single tellurium nanotube based high performance photodetector
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778105/
https://www.ncbi.nlm.nih.gov/pubmed/35056176
http://dx.doi.org/10.3390/mi13010011
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