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Diamond/GaN HEMTs: Where from and Where to?
Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high e...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778208/ https://www.ncbi.nlm.nih.gov/pubmed/35057131 http://dx.doi.org/10.3390/ma15020415 |