Cargando…

Diamond/GaN HEMTs: Where from and Where to?

Gallium nitride is a wide bandgap semiconductor material with high electric field strength and electron mobility that translate in a tremendous potential for radio-frequency communications and renewable energy generation, amongst other areas. However, due to the particular architecture of GaN high e...

Descripción completa

Detalles Bibliográficos
Autores principales:	Mendes, Joana C., Liehr, Michael, Li, Changhui
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Review
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC8778208/ https://www.ncbi.nlm.nih.gov/pubmed/35057131 http://dx.doi.org/10.3390/ma15020415

Ejemplares similares

Thermal Performance Improvement of AlGaN/GaN HEMTs Using Nanocrystalline Diamond Capping Layers
por: Guo, Huaixin, et al.
Publicado: (2022)

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs
por: Lv, Hanghang, et al.
Publicado: (2023)

Optimization AlGaN/GaN HEMT with Field Plate Structures
por: Shi, Ningping, et al.
Publicado: (2022)

Effect of Acceptor Traps in GaN Buffer Layer on Breakdown Performance of AlGaN/GaN HEMTs
por: Ma, Maodan, et al.
Publicado: (2022)

Computational-fitting method for mobility extraction in GaN HEMT
por: Chang, Kuan-Chang, et al.
Publicado: (2023)

Strain Balanced AlGaN/GaN/AlGaN nanomembrane HEMTs
por: Chang, Tzu-Hsuan, et al.
Publicado: (2017)

Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVD
por: Xu, Peiqiang, et al.
Publicado: (2012)

Simulation Study on the Structure Design of p-GaN/AlGaN/GaN HEMT-Based Ultraviolet Phototransistors
por: Wang, Haiping, et al.
Publicado: (2022)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

Trap Characterization Techniques for GaN-Based HEMTs: A Critical Review
por: Zou, Xiazhi, et al.
Publicado: (2023)

Modeling the Effects of Threading Dislocations on Current in AlGaN/GaN HEMT
por: Liu, Censong, et al.
Publicado: (2023)

Exploring the Potential of GaN-Based Power HEMTs with Coherent Channel †
por: Chen, Xinghuan, et al.
Publicado: (2023)

High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers
por: Lee, Ya-Ju, et al.
Publicado: (2014)

Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs
por: Guo, Huaixin, et al.
Publicado: (2020)

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration
por: Hsu, Lung-Hsing, et al.
Publicado: (2021)

Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
por: Paz-Martínez, Gaudencio, et al.
Publicado: (2022)

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
por: Wang, Jie, et al.
Publicado: (2021)

Scaling behavior of InAlN/GaN HEMTs on silicon for RF applications
por: Cui, Peng, et al.
Publicado: (2022)

High Hole Concentration and Diffusion Suppression of Heavily Mg-Doped p-GaN for Application in Enhanced-Mode GaN HEMT
por: Dai, Jin-Ji, et al.
Publicado: (2021)

A Novel Step–Doped Channel AlGaN/GaN HEMTs with Improved Breakdown Performance
por: Liu, Jianhua, et al.
Publicado: (2021)

High Selectivity, Low Damage ICP Etching of p-GaN over AlGaN for Normally-off p-GaN HEMTs Application
por: Zhang, Penghao, et al.
Publicado: (2022)

Miniature Mesa Extension for a Planar Submicron AlGaN/GaN HEMT Gate Formation
por: Alathbah, Moath, et al.
Publicado: (2022)

Open-Gated pH Sensor Fabricated on an Undoped-AlGaN/GaN HEMT Structure
por: Abidin, Mastura Shafinaz Zainal, et al.
Publicado: (2011)

Investigation on the I–V Kink Effect in Large Signal Modeling of AlGaN/GaN HEMTs
por: Mao, Shuman, et al.
Publicado: (2018)

Impact of Gamma Radiation on Dynamic R(DSON) Characteristics in AlGaN/GaN Power HEMTs
por: Martínez, Pedro J., et al.
Publicado: (2019)

Study of Normally-Off AlGaN/GaN HEMT with Microfield Plate for Improvement of Breakdown Voltage
por: Xia, Xiaoyu, et al.
Publicado: (2021)

Influence of Gate Geometry on the Characteristics of AlGaN/GaN Nanochannel HEMTs for High-Linearity Applications
por: Zhang, Meng, et al.
Publicado: (2023)

Investigation on GaN HEMTs Based Three-Phase STATCOM with Hybrid Control Scheme
por: Ma, Chao-Tsung, et al.
Publicado: (2021)

Highly sensitive AlGaN/GaN HEMT biosensors using an ethanolamine modification strategy for bioassay applications
por: Gu, Zhiqi, et al.
Publicado: (2019)

Novel High-Energy-Efficiency AlGaN/GaN HEMT with High Gate and Multi-Recessed Buffer
por: Zhu, Shunwei, et al.
Publicado: (2019)

Study on the Effects of Quantum Well Location on Optical Characteristics of AlGaN/GaN Light-Emitting HEMT
por: Shen, Yao-Luen, et al.
Publicado: (2023)

Origin(s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
por: Ghosh, Saptarsi, et al.
Publicado: (2021)

High Selectivity Hydrogen Gas Sensor Based on WO(3)/Pd-AlGaN/GaN HEMTs
por: Nguyen, Van Cuong, et al.
Publicado: (2023)

The Influence of the Different Repair Methods on the Electrical Properties of the Normally off p-GaN HEMT
por: Niu, Di, et al.
Publicado: (2021)

E/D-Mode GaN Inverter on a 150-mm Si Wafer Based on p-GaN Gate E-Mode HEMT Technology
por: Jia, Li-Fang, et al.
Publicado: (2021)

Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation
por: Cui, Peng, et al.
Publicado: (2022)

Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
por: Khediri, Abdelkrim, et al.
Publicado: (2021)

Numerical Investigation of GaN HEMT Terahertz Detection Model Considering Multiple Scattering Mechanisms
por: Meng, Qingzhi, et al.
Publicado: (2023)

On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs
por: Zagni, Nicolò, et al.
Publicado: (2021)

Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review
por: Haziq, Muhaimin, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_tril5etraeme3ktcv9nimfjqmn